Mid-infrared In1−xAlxSb/InSb heterostructure diode lasers

Stimulated emission at 5.1 μm was demonstrated from a broad area In1−xAlxSb/InSb heterostructure diode laser grown by molecular beam epitaxy. For a 5 μs pulse and a 500 Hz repetition rate the threshold current density was 1480 A cm−2 at 77 K and the maximum operating temperature was 90 K at a current density of 2680 A cm−2. Maximum peak power output was estimated to be 28 mW per facet at 77 K and 4500 A cm−2.