1.52 μm electroluminescence from GaAs-based quantum dot bilayers

InGaAs strain reducing layers (SRLs) are applied to InAs bilayer quantum dots (QDs) grown by molecular beam epitaxy on GaAs substrates. By control of the QD size and density and the composition of the SRLs, peak ground state electroluminescence of up to 1.52 µm is demonstrated from devices incorporating five QD bilayers, without the need for a metamorphic buffer layer.