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Photoluminescence properties from SiO 2 /Ga 2 O 3 /GaN structure formed with remote plasma
Photoluminescence properties from SiO 2 /Ga 2 O 3 /GaN structure formed with remote plasma
2018
Noriharu Takada
Noriyuki Taoka
Akio Ohta
Taishi Yamamoto
Truyen Nguyen Xuan
Hisashi Yamada
Tokio Takahashi
Mitsuhisa Ikeda
Katsunori Makihara
Mitsuaki Shimizu
Seiichi Miyazaki
Keywords:
Photoluminescence
Materials science
Remote plasma
Optoelectronics
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