On the Factors Determining the Morphology of Wet‐Etched n‐ and p ‐ GaP Single‐Crystal Surfaces

Wet etching of [111]-oriented GaP single crystals is performed in aqueous KOH solutions at different anodic potentials for p-type and at different anodic potentials and illumination levels for n-type samples. Furthermore, both n- and p-type crystals are photoetched in KOBr solutions at open-circuit potential. The influence of the rate-determining step on the etching morphology is shown