Semiconductor device, method of manufacturing a semiconductor device, a semiconductor manufacturing apparatus and a computer recording medium

The present invention, without increasing the film thickness, and aims to suppress a decrease in capacitance. In a semiconductor device having a capacitor, the capacitor has an upper electrode with the lower electrode, and an insulating film sandwiched between the lower electrode and the upper electrode. The surface of the insulating layer side of the lower electrode is nitrided. If the lower electrode of polysilicon, by the surface is nitrided, oxidation resistance during heat treatment in a later step can be improved. Particularly, in DRAM, the capacitance of the capacitor is increased, a large effect. Also reduced leakage current of the internal capacitor.