Trench isolation type alpha irradiation battery with PIN type GaN extension layer and manufacturing method

The invention discloses a trench isolation type alpha irradiation battery with a PIN type GaN extension layer and a manufacturing method. The PIN type alpha irradiation battery mainly solves the problem that the output voltage of an existing silicon carbide PIN junction alpha irradiation battery is limited. The PIN type alpha irradiation battery comprises a PIN junction, trenches (9), an alpha irradiation source layer (8) and metal bonding parts (5). The PIN junction is provided with a P type epitaxial layer ohmic contact electrode (6), the P type epitaxial layer (2), an N type epitaxial layer (3), an N type SiC substrate (4) and an N type ohmic contact electrode (7) from top to bottom. The trenches are formed in the left side and the right side of the upper portion of the PIN junction. The alpha irradiation source layer is located above the P type epitaxial layer ohmic contact electrode. The metal bonding parts are located on the left side and the right side of the alpha irradiation source layer, and the lower surface of each bonding part makes full contact with the P type epitaxial layer ohmic contact electrode. The PIN type alpha irradiation battery has the advantages that the contact area of an irradiation source and a semiconductor is large, the utilization rate of nuclear raw materials and the collecting rate of energy are high, and the output voltage of the battery is large, and power can be continuously supplied to micro circuits.