A Very High Performance, Epi-Free, and Manufacturable 3.3 V 0.35 pn BiCMOS Technology for Wireless Applications

In this paper, an epi-free, manufacturable, and high performance 3.3 V 0.35 pm High-Energy Implanted BiCMOS (HEIBiC) technology will be presented. The developed HEIBiC process includes a single-polysilicon NPN bipolar transistor with product of 138 GHzV is shown to be one of the best results for silicon BiCMOS without an epitaxial buried collector.