A method for forming a semiconductor device structure

A method for forming a semiconductor device structure, comprising: providing a first active area (SOI-A) and a second active region (BULK-A) in a top surface portion of a substrate (200), wherein the first and second active region (SOI-A, BULK-A) by at least one insulation structure laterally spaced; forming a first gate structure (210A) having a first gate dielectric (212A) and a first gate electrode material (214A) above the first active region (SOI-A) and a second gate structure (220A) with a second gate dielectric (222A) and a second gate electrode material (224A) above the second active region (BULK-a), wherein a thickness of the second gate dielectric (222A) is greater than a thickness of the first gate dielectric (212A); depositing a first sidewall spacer material layer (232A) via the first and second gate structures (210A, 220A); forming a first mask (M4A) above the second active region (BULK-A), wherein the first active region (SOI-A) is exposed for further processing; anisotropic etching of the first side wall spacer material (232A), a first sidewall spacer (231A) is formed on the first gate structure (210A) and upper-side surface areas in the first active region (SOI-A) in alignment with the first mask (M4A) and the first exposed sidewall spacer (231A); epitaxial growth of elevated source / drain regions (234A) in the exposed upper surface areas; removing the first mask (M4A); forming a first spacer structure (SP2-A) over the second gate structure (220A); forming a second mask (M7A) above the first active region (SOI-A), wherein the second active region (BULK-A) is subjected to further processing; performing an implantation process (245A) for increasing a Dotierstoffniveaus in the second active region (BULK-A) in alignment with the second gate structure (220A) and the first spacer structure (Sp2-A); removing the second mask (M7A); and exchanging the first spacer structure (Sp2-A) by a second spacer structure (260A) on the second gate structure (220A), ...