Modeling the Drain Current of a PHEMT using the Artificial Neural Networks and a Taylor Series Expansion

Artificial neural networks (ANNs) have recently been introduced in the microwave area as a fast and flexible vehicle to microwave modeling, simulation and optimization. The models are fast and can represent EM/physics behaviors it learnt which otherwise are computationally expensive. In this paper a neural network model is developed for a Pseudomorphic High Electron Mobility Transistor PHEMT (ED02AH-6x30), a transistor of 6 gate fingers, each with a width of 30