A high performance thin-film transistor using a low temperature poly-Si by silicide mediated crystallization

Electric field enhanced silicide mediated crystallization (SMC) was introduced for low-temperature polycrystalline silicon thin-film transistors (TFTs) on glass substrates. The amorphous silicon (a-Si) film having an average Ni thickness of 0.15 /spl Aring/, was completely crystallized at a temperature of 480/spl deg/C within 30 min in the presence of an electric field of 40 V/cm. The poly-Si is composed of needlelike crystallites with a few /spl mu/m length and about 50 nm width. The poly-Si TFT using the SMC exhibited a field effect mobility of 86 cm/sup 2//Vs, a threshold voltage of -0.6 V, and a subthreshold slope of 0.6 V/dec.