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Acemap > Paper > 成長条件下のIn 0.25 Ga 0.75 N表面の安定性とインジウム取込み過程: 第一原理計算

成長条件下のIn 0.25 Ga 0.75 N表面の安定性とインジウム取込み過程: 第一原理計算

2010 
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