Utilization of surface electromagnetic wave excitation for increase of submicron diffraction grating depth on n-InP fabricated by holographic wet etching

New maskless method of submicron relief diffraction gratings formation in the process of wet photochemical etching of n-A III B V semiconductors is developed. It is a combination of holographic method and method of laser-induced relief generation under resonant excitation of surface electromagnetic waves. The increments of exponential time growth of dominant relief Fourier harmonics at the initial (linear) stage are measured. It was discovered for the first time experimentally that nonlinear stage of relief time evolution is characterized by oscillations of amplitudes of first and second surface. Fourier harmonics and is accompanied by laser-stimulated effect of specular reflection suppression. The possibilities to control the profile form of laser-induced periodic relief (both for gratings with symmetrical and asymmetrical profiles) are explored.