Low threshold current density, high power, high efficiency 670 nm GaInP/AlGaInP SQW laser diode

Presents a high power (3.6 W from 64 /spl mu/m wide gain guided while 88.0 mW from 2 /spl mu/m wide ridge waveguide devices), high efficiency (95.5%) GaInP/AlGaInP SQW laser diode, which emits at 670 nm and has an ultra low threshold current density (238 A/cm/sup 2/) and very high characteristic temperature (150 K).