Towards wafer scale monolayer MoS 2 based flexible low-power RF electronics for IoT systems

There is a growing interest in the design of novel flexible electronics for future internet of things (IoT) systems [1]. IoT requires design of low power RF electronics operating at GHz frequency range. Molybdenum disulphide (MoS2) is the prototypical transitional metal dichalcogenide (TMD) affording a large semiconducting bandgap (1.8eV), high saturation velocity, good mechanical strength, high mobility (> 50cm 2 /Vs), high on/off ratio (> 10 6 ), good current saturation and GHz RF performance [2]. In this work, we demonstrate wafer scale monolayer MoS 2 based flexible RF nanoelectronics that can be used for low power nanoelectronics and flexible IoT systems.