High-value low-noise resistors for spectrometers with cooled semiconductor detectors
1986
This paper describes high-value low-noise preamplifier resistors for spectrometers with cooled semi-conductor detectors. The noise level of the resistors is lower by a factor of about 4 than that of mass-produced KVM resistors. Resistors with low excess noise can be prepared from boron oxide film. The authors describe resistors prepared by photolithography from high-resistance films formed on the surface of leadsilicate glass as a result of oxidation-reduction processes in heat treatment in a hydrogen atmosphere. The new resistors improve the energy resolution of spectrometers with resistive feedback.
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