Co-simulation results of a 60 GHz CMOS LNA integrated and packaged in gap-waveguide technology

A low noise amplifier (LNA) realized in CMOS technology operating in the 60 GHz band has been packaged in gap-waveguide technology. The bare die LNA is implemented in 40 nm digital CMOS technology. The chip interface is wire-bonded to a PCB employing a contactless connection to a metal waveguide. The co-simulation results of the back-to-back combined LNA-waveguide structure features a system available gain of 10.5 dB and a noise figure NF of 4.63 dB, which is comparable to the isolated LNA performance (12.8 dB available gain, 3.95 dB NF).