High-performance quantum dot LED and preparation method thereof

The invention discloses a high-performance quantum dot LED and a preparation method thereof. The high-performance quantum dot LED sequentially comprises a substrate, an anode layer, a hole injection layer, a hole transporting layer, a quantum dot light-emitting layer, an electron injection layer and a cathode layer from bottom to top. The quantum dot light-emitting layer is coated by electron-donating groups. According to the technical scheme of the invention, electron-donating groups cover the surface of the quantum dot light-emitting material, so that a dipole is formed on the surface of the quantum dot light-emitting material. When the quantum dot light-emitting layer is prepared, directional dipoles are formed on the two interfaces of the hole transporting layer and the electron injection layer. Therefore, the energy band structure of the quantum dot light-emitting material is improved, so that the hole-injection effect is enhanced. The electron injection is inhibited. The injection balance of carries is effectively improved, and the device performance is enhanced.