OBSERVATION OF METAL-OXIDE-SEMICONDUCTOR TRANSISTOR OPERATION USING SCANNING CAPACITANCE MICROSCOPY

We report scanning capacitance microscopy (SCM) images of a working p-channel metal–oxide–semiconductor field-effect transistor (P-MOSFET) during device operation. Independent bias voltages were applied to the source/gate/drain/well regions of the MOSFET during SCM imaging, and the effect of these voltages on the SCM images is discussed.