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Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO 3 -SrTiO 3 -Based Heterostructures
Field-Effect Transistors with Submicrometer Gate Lengths Fabricated from LaAlO 3 -SrTiO 3 -Based Heterostructures
2015
Carsten Woltmann
T. Harada
Hans Boschker
Vesna Srot
P. A. van Aken
Hagen Klauk
Jochen Mannhart
Keywords:
Optoelectronics
Heterojunction
Materials science
Field-effect transistor
Correction
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