An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors

This article presents an analytical method for parameter extraction in oxide semiconductor field-effect transistors (OS FETs), including threshold voltage ( ${V}_{\text {T}}$ ), effective channel length ( ${L}_{\text {eff}}$ ), source–drain series resistance ( ${R}_{\text {SD}}$ ), and intrinsic effective mobility ( $\mu _{\text {int}}$ ). An analytical expression of effective mobility ( $\mu _{\text {eff}}$ ) is implemented with the consideration of percolation conduction and ${R}_{\text {SD}}$ effects. This method relies on the concept of ${Y}$ -function method and the channel length dependent measurement. The extraction results are compared to those from the combination of transfer length method (TLM). It has been shown that a better accuracy of the extracted parameters is achieved with the proposed method. Furthermore, transfer characteristics are resimulated based on the extracted parameters, in which a good match between measurement and simulation is obtained.