Optical and magnetic measurements of p-type GaN epilayers implanted with Mn+ ions

The p-type GaN epilayers were prepared by metalorganic chemical vapor deposition and subsequently Mn+ ions implanted. The properties of Mn+ ions-implanted GaN epilayers were investigated by optical and magnetic measurements. The results of photoluminescence measurement show that optical transitions related to Mn apparently appear at 2.5 eV and around 3.0 eV. It is confirmed that the photoluminescence peak at 2.5 eV is a donor–Mn acceptor transition. Ferromagnetic hysteresis loop was observed, and the temperature-dependent magnetization displayed a ferromagnetic behavior persisting up to ∼270 K.