High reliability packaging technologies for 175deg.C continuous operation in IGBT module

One solution for increasing the power density in Insulated Gate Bipolar Transistor (IGBT) module is to raise the maximum junction temperature (T jmax ) =175°C against conventional T jmax =150°C. However, the challenges for T jmax =175°C operation are the decreased power cycling (P/C) capability. We have already reported the failure mechanisms about P/C test and new technologies for improving P/C capability [1]. Especially power module for e-auto mobility, using high ambient temperature, is required to guarantee the 175°C continuous operation. Moreover it required about 10 times longer thermal cycling (T/C) capability than what is used for industry. In this paper, we report the effort to improve the T/C capability using new technologies for 175°C continuous operation.