Screening of Oxide/GaAs Interfaces for MOSFET Applications

Photoluminescence intensity (PL-I) data are presented for 22 dielectric/GaAs systems investigated for MOSFET applications. The PL-I technique has been identified as a most useful and reliable tool for screening dielectric/GaAs interfaces and has been instrumental in the identification of a device quality dielectric/GaAs interface: in situ deposited Ga 2 O 3 on GaAs. The early discovery of such an interface has allowed us to focus resources and to succeed to manufacture GaAs MOSFETs which perform in line with theoretical model predictions after more than 40 years of failed attempts. It is strongly recommended to extend the technique to the investigation of CMOS relevant channel materials such as InGaAs.