Precise Two-step Growth of 940-nm VCSEL on a GaAsP-capped DBR Wafer

Jiaxing Wang,Jonas Kapraun,Emil Kolev,Jipeng Qi,Kevin T. Cook,C.J. Chang-Hasnain

Precise Two-step Growth of 940-nm VCSEL on a GaAsP-capped DBR Wafer

2018

Jiaxing Wang
Jonas Kapraun
Emil Kolev
Jipeng Qi
Kevin T. Cook
C.J. Chang-Hasnain

We report a 2-step growth for 940-nm VCSELs on DBRs capped by a novel protective GaAsP layer, desorbed during the secondary growth including laser region to yield precise high quality VCSELs with sub-mA threshold.

Keywords:

Laser
Optoelectronics
Vertical-cavity surface-emitting laser
Optics
Physics
Epitaxy
Wafer
Secondary growth
two step

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