Deep-Trench Process Technology for Three-Dimensionally Integrated SOI-Based Image Sensors

Large arrays of scientific imaging devices are in demand for wide-field-of-view imaging systems. We present a deep-trench process technology that enables the fabrication of SOI-based, 3-D-integrated, 4-side-abuttable image sensor "tiles" that can be assembled into large-area focal plane arrays. We demonstrate low-leakage, functional devices with 13.4-mum spacing between tile edge and the first imaging pixel.