State-of-the-art large area CVD MoS 2 based RF electronics

In this work we demonstrate state-of-the-art large area monolayer CVD M0S2 based RF transistors on both flexible and Si substrates. We report the highest RF performance (fT ∼ 5.9GHz and fmax ∼ 3.3GHz) among flexible MoS2 based thin film transistors. Our embedded gate CVD MoS2 transistors on CMOS compatible Si substrates shows record fT∼ 20GHz, fmax ∼ 11.4GHz, and saturation velocity vsat ∼ 1.88∗106 cm/s. We also present the design of MoS2 based RF circuits (GHz amplifier and flexible wireless AM receiver).