Thin film electroluminescence device and manufacturing method thereof

The invention relates to a manufacturing method of a thin film electroluminescence device with doped semiconductor quantum dots being cladded with silica gel. The thin film electroluminescence device comprises an ITO (Indium Tin Oxide) conductive glass layer, a first insulating layer, a light emitting layer, a second insulating layer and a metal Al electrode which are arranged in sequence. The light emitting layer is formed by cladding doped semiconductor quantum dots with SiO2 gel; because the light emitting layer is prepared by cladding the doped semiconductor quantum dots with the silica gel, the compact degree of the light emitting layer can be improved, the breakdown resistance capability of the light emitting layer is effectively enhanced, the service life of the thin film electroluminescence device is prolonged, and the light emitting efficiency is improved. Meanwhile, in the thin film electroluminescence device of which the light emitting layer is prepared by cladding the doped semiconductor quantum dots with the silica gel, the thickness of the light emitting layer can be controlled relatively easily. Meanwhile, the manufacturing method disclosed by the invention can realize thin film electroluminescence devices with different light emitting intensities. The invention further provides the manufacturing method of the thin film electroluminescence device.