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Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
2017
Takayama Rumi
Hoshii Takuya
Nakajima Akira
Nishizawa Shinichi
Ohashi Hiromichi
Kakushima Kuniyuki
Wakabayashi Hitoshi
Tsutsui Kazuo
Keywords:
Nuclear magnetic resonance
Substrate (chemistry)
Electronic engineering
Polarization (waves)
Capacitance
Materials science
Optoelectronics
Correction
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