Merged dram and logic and manufacturing method

PURPOSE: An MDL(merged DRAM and logic) and manufacturing method are provided to enhance the MDL by ensuring sufficient photo margin in wiring, and to enhance the reliability of the process by preventing the process failure generated during forming a contact hole. CONSTITUTION: A merged DRAM and logic comprises a nth layer insulation film formed on a semiconductor substrate(100), a first metal wiring(128) formed on the nth insulation film, a (n+1)th layer insulation film formed on the nth insulation film, a first metal wiring formed on the (n+1)th layer insulation film, and a second metal wiring formed on the (n+1)th layer insulation film. The first metal wiring is formed any region except memory cell region(A). The first metal wiring is formed in the memory cell region. The second metal wiring is formed in the any region.