Electron transport properties of Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT)

In this study, a Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (ρ), Hall mobility (μ) and carrier density (n) are measured in 0.01–0.14 T magnetic field range and 25–340 K temperature range. Also, scattering mechanisms effecting electron mobility are discussed. Resistivity analyses are presented by depending on resistivity measurements.