60GHz coplanar low-noise amplifier fabricated using AlAs/InAs superlattice-inserted inp-based heterojunction FETs

This paper presents a 60GHz coplanar MMIC LNA (Low-Noise Amplifier) using 0.1μm-gate-length InP HJFETs (Heterojunction FETs) which utilize an AlAs/InAs superlattice for improved reliability. The FET model used for LNA design contains a scaling model of the gate resistance for a narrow gate electrode. The LNA demonstrated a state-of-the-art noise figure of 2.0dB with 22.1dB gain at 60GHz.