Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

Chlorine auto-doping phenomenon is found for the first time in InP epitaxial growth by using the PCl/sub 3//InP/H/sub 2/ system. Chlorine atoms act as donors in the epitaxial layer and the carrier concentration is controlled by the facet of the InP substrate. The carrier concentration of the InP layer on (111)B facet is 10/sup 3/ times higher than that on the (100)2/spl deg/ off [110] substrate.