SOI voltage resistant structure having interface charge island for power device

The invention discloses a SOI breakdown structure with an interface charge island for power devices. The SOI breakdown structure comprises a semiconductor substrate layer, a dielectric buried layer and a semiconductor active layer, wherein a plurality of high-concentration n regions extending into the semiconductor active layer are arranged in all or part of the interface between the dielectric buried layer and the semiconductor active layer at intervals; and the high-concentration n region is made of a semiconductor material and has a concentration range larger than 1times10cm. The SOI breakdown structure can greatly enhance the electric field of the dielectric buried layer, thereby effectively improving the breakdown voltage; and the process is realized simply and fully compatible to the conventional CMOS/SOI process. In addition, no excessive insulation materials similar to a dielectric groove structure are adopted, so that no additional self-heating effect is generated. Meanwhile, the structure can be used in a power device, and the breakdown voltage can be improved greatly in comparison with the conventional SOI device due to the remarkable enhancement of the electric field of the dielectric buried layer.