Resonant tunnelling effects in semiconductor heterostructures

The resonant tunnelling effect in semiconductor heterostructures is widely regarded as an electronic analogue of the Fabry-Perot resonance effect in optics. Two tunnel barriers form a resonant cavity (quantum well) for the de Broglie waves of conduction electrons. These electrons are brought into resonance by means of an applied voltage. Resonant tunnelling devices have been reviewed recently by several authors.