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High brightness InGaN/GaN blue LED realized by a 2"×6 MOCVD system
High brightness InGaN/GaN blue LED realized by a 2"×6 MOCVD system
2004
Jin Woo Ju
Kwang-Su Ryu
A. S. Fedorov
Cheul-Ro Lee
In-Hwan Lee
Ki-Ho Park
Young Hee Lee
Keywords:
Brightness
Metalorganic vapour phase epitaxy
Optics
Optoelectronics
Materials science
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