Analysis of molecular resist distribution in a resist film by using x-ray reflectivity
2009
To obtain high resolution and sensitivity and low line width roughness (LWR), the resist film homogeneity is thought to
be the key requirement of extreme ultraviolet lithography (EUVL) resist materials. We have synthesized of a new class
of chemically amplified molecular glass resists containing rigid triphenolic cores which are protected by flexible side
chains. We analyzed the electron density distribution of resist films (70 nm) by using X-ray reflectivity (XRR). The
effects of protection ratio, high and low activation protecting groups, chain lengths have been tested using selected
molecular resist. We discuss the effects of the chemical structures of new molecular resists on EUV lithographic
performances.
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