Free and bound charge carriers dependent Raman susceptibilities in weakly-polar magnetoactive semiconductors

Abstract In this paper, an analytical investigation of free and bound charge carriers dependent Raman susceptibilities has been made in weakly-polar magnetoactive semiconductors. The coupled mode approach has been used to obtain expressions for real and imaginary parts of Raman susceptibilities. The semiconductor sample is assumed to be illuminated by an off-resonant pulsed laser under Voigt geometry. For numerical estimations, we choose n-type doped InSb crystal at liquid nitrogen temperature and illuminated by a pulsed CO2 laser at 10.6 μm wavelength. Efforts have been paid to optimize the doping concentration, external magnetic field and pump intensity to obtain enhanced values of Raman susceptibilities and change of their sign. The change of sign of enhanced Raman susceptibilities, in weakly-polar semiconductors under appropriate selection of n-type doping and external magnetic field, validates the possibility of selected sample as a potential candidate material for the fabrication of stimulated Raman scattering dependent widely tunable optoelectronic devices such as optical switches and frequency converters.