Low temperature plasma enhanced CVD for antifuse technology

A novel antifuse structure with double dielectric layers, AlN(10nm)/ SiN(10nm), is presented in this paper. The SiN and SiO{sub 2} for insulating are deposited by low temperature PECVD. Experimental results show this antifuse has excellent characteristics. Comparing to other antifuses, the thicker insulator layer of this antifuse improves its reliability and also offers a low off-state leakage current while still keeping the breakdown voltage below 15 V. The fabrication process, characteristics of the antifuse and breakdown mechanisms are described and discussed in detail. A low temperature deposition of the insulator layer is important to avoid the interaction between the metal and dielectric layers. It was found that low temperature cathodic arc and PECVD methods are therefore benefit to the reliability of the antifuse. The breakdown link of antifuse was observed under Field Emission Scanning Electron Microscope.