Multiple dielectric resonance behaviors and microwave attenuation in vanadium nitride/vanadium sesquioxide nanowires

Abstract Vanadium nitride/vanadium sesquioxide nanowires (VN/V2O3 NWs) with multiple dielectric resonance behaviors were prepared by a simple method of partial nitridation. By many approach utilization, it was discovered that the one-dimensional (1D) structure of the as-prepared material was efficiently kept after partial nitridation. Nanoparticles-stacked VN/V2O3 NWs caused multiple dielectric resonances and then enhanced microwave attenuation. The as-prepared material exhibited good microwave absorption performances in X-band (8.2–12.4 GHz): a minimum reflection loss (RL) of −41.0 dB with an absorption bandwidth of 3.0 GHz (RL