GaN based extension structure for improving antistatic capacity of LED and growing method of GaN based extension structure

The invention discloses a GaN based extension structure for improving antistatic capacity of an LED and a growing method of the GaN based extension structure. The GaN based extension structure comprises a substrate, a low-temperature GaN buffer layer, a GaN non-mixing layer, a first N-type GaN layer, an MQW structure, a MQW active layer, a low-temperature P-type GaN layer, a P-type AlGaN layer, a high-temperature P-type GaN layer and a P-type contact layer from bottom to top in sequence. An N-type ALxGa1-xN layer and a second N-type GaN layer are inserted between the first N-type GaN layer and an MQW structure layer in sequence, wherein the equation of 0.05layer is inserted, dislocation and defect concentration in a GaN based extension layer are limited, distribution of charge carriers is improved, and the antistatic capacity of an LED chip can be effectively improved by over 10%.