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Acemap > Paper > Improved strained HEMT characteristics using double-heterojunction In(0.65)Ga(0.35)As / In(0.52)Al(0.48)As design

Improved strained HEMT characteristics using double-heterojunction In(0.65)Ga(0.35)As / In(0.52)Al(0.48)As design

1989 
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