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Acemap > Paper > Rapid Growth of α-Ga 2 O 3 by HCl-Boosted Halide Vapor Phase Epitaxy and Effect of Precursor Supply Conditions on Crystal Properties

Rapid Growth of α-Ga 2 O 3 by HCl-Boosted Halide Vapor Phase Epitaxy and Effect of Precursor Supply Conditions on Crystal Properties

2020 
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