90nm low leakage SoC design techniques for wireless applications
2005
The new generation of multimedia-application processors requires a drastic leakage reduction to bring the standby current to 50/spl mu/A. An efficient set of leakage reduction techniques, including power gating, memory retention, voltage scaling, and dual V/sub t/, is employed on a 50M transistor, 80mm/sup 2/ IC, fabricated in a 90nm CMOS technology, resulting in a 40/spl times/ leakage reduction.
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