Method and apparatus for plasma treatment of a flat substrate

In the method for plasma treating a substrate in a plasma apparatus, wherein - the substrate between an electrode and a counter electrode with a distance d between a is placed the substrate and the electrode surface area to be treated, - a capacitively coupled plasma discharge with the formation of a DC self-bias is excited between the electrode and the counter electrode, - an amount at least with which a surface to be treated area of ​​the substrate is applied to an activatable Gasspezie present in a range of the plasma discharge between the surface to be treated and the area of ​​the electrode with a quasi-neutral plasma bulk, - it is envisaged that a plasma discharge is excited, - wherein the distance d has a value which is comparable to s = s + sg, wherein se a thickness of a plasma sheath in front of the electrode and sg a thickness of a plasma sheath referred to or prior to the treated substrate surface - wherein the quasi-neutral plasma bulk between the surface area to be treated and the electrode has a linear expansion dp dp <1 / 3D, dp SG) or dp <0.5s. Furthermore, the invention relates to an apparatus for plasma treatment of a substrate comprising - means for exciting a capacitively coupled, a DC self-bias having plasma discharge in a region between an electrode and a counter electrode, and - means for transport ...