Multicarrier analysis of semiconducting films by including the effect of magnetoresistance: Application in β-FeSi2 films

A method of multicarrier analysis of semiconducting β-FeSi2 thin films is described, based on Hall and magnetoresistance data from variable magnetic field measurements. We exploit both the longitudinal and transverse resistivity components to extract the concentration and mobility of each carrier. Nonlinear fitting is used to fit simultaneously the magnetoresistivity and Hall resistivity data versus the magnetic field. The criteria and the procedure, as well as the selection of a proper function for minimization are discussed. Application of the proposed method in β-FeSi2 thin films revealed the presence of multiple carriers, explaining the nonlinear dependence of the Hall voltage on the magnetic field. Analysis of the Hall data at various temperatures revealed the most probable scattering mechanisms and a thermally activated behavior of the carrier concentration.