Large Scale Assembly of Pristine Semiconducting Carbon Nanotube Network-Based Devices Exhibiting Intrinsic Characteristics

We report the large-scale fabrication of high-performance field effect transistors (FETs) based on pristine semiconducting single-walled carbon nanotube (s-SWCNT) networks without bundles or organic impurities, thus exhibiting its intrinsic characteristics. Here, the solution of pristine s-SWCNTs without bundles or organic impurities was prepared in nonpolar solvent via filtration and centrifugation processes, and the s-SWCNTs in the solution were selectively assembled onto specific regions on the solid substrates via a directed assembly strategy. The fabricated FET devices based on such pristine s-SWCNT networks could exhibit a rather large on–off ratio up to over ∼106 and a subthreshold swing as small as ∼490 mV/dec, which are comparable to those of a single s-SWCNT-based device with the same device structure. Importantly, the s-SWCNT devices exhibited anomalous gating behaviors such as an on-current saturation at a large gate bias and unconventional scaling behaviors, which are quite different from tho...