Structural Characterization of Short-Period SimGEn Superlattices by Transmission Electron Microscopy and X-Ray Diffraction
1991
High resolution and analytical transmission electron microscopy (TEM) and X-ray diffraction (XRD) were used to characterize short-period strained-layer Sim-Gen superlattices ( m monolayers Si, n monolayers Ge, total number of periods N≤ 145, total thickness ≃ 200 nm). The superlattices were grown by low-temperature molecular beam epitaxy (T = 300–400°C) on different SiGe alloy buffer layers on Si (100)substrates. The combination of these two methods shows that detailed informations can be obtained about superlattice periodicity, interface roughness, strain, and average composition.
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