Vertical spin-transfer torque memory device (STTM device) with staggered cells and methods of training

It will be described with staggered cells and methods for fabricating vertical STTM devices with staggered cells perpendicular spin-transfer torque memory devices (STTM) devices. For example, a spin transfer torque memory array (STTM array) includes a first load line, which is disposed above a substrate and has only a first STTM device. The STTM array also includes a second load line, which is disposed above the substrate at the first load line and only one second STTM device, said second STTM device is not coplanar with the first STTM device.