LEC growth of Te-doped GaSb single crystals with uniform carrier concentration distribution

Abstract Large diameter (35–50 mm) Te-doped 〈100〉 GaSb single crystals have been successfully grown from a non-stoichiometric melt by the liquid encapsulated Czochralski (LEC) method. The X-ray transmission topograph shows that the 〈100〉 crystals have extremely low dislocation densities (less than 1 cm −2 ), weak striations and no facets. Hall measurements show that the carrier concentration (7.1×10 18 cm −3 ) distribution is within ±5% deviation over (100) wafers.