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High Sensitivity Observation of Dopant Concentration in GaN semiconductor by Phase-Shifting Electron Holography
High Sensitivity Observation of Dopant Concentration in GaN semiconductor by Phase-Shifting Electron Holography
2017
Kiyotaka Nakano
Miko Matsumoto
Satoshi Anada
Kazuo Yamamoto
Yuto Ando
Masaya Ogura
Si-Young Bae
Atsushi Tanaka
Yoshio Honda
Yukari Ishikawa
Hiroshi Amano
Tsukasa Hirayama
Keywords:
Phase (waves)
Dopant
Semiconductor
Optics
Electron holography
Optoelectronics
Intrinsic semiconductor
Materials science
nitride semiconductors
Correction
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